IXGX55N120A3H1 IXYS
Hersteller: IXYSDescription: IGBT 1200V 125A 460W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 200 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 23ns/365ns
Switching Energy: 5.1mJ (on), 13.3mJ (off)
Test Condition: 960V, 55A, 3Ohm, 15V
Gate Charge: 185 nC
Current - Collector (Ic) (Max): 125 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 400 A
Power - Max: 460 W
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Technische Details IXGX55N120A3H1 IXYS
Description: IGBT 1200V 125A 460W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Reverse Recovery Time (trr): 200 ns, Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 55A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 23ns/365ns, Switching Energy: 5.1mJ (on), 13.3mJ (off), Test Condition: 960V, 55A, 3Ohm, 15V, Gate Charge: 185 nC, Current - Collector (Ic) (Max): 125 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 400 A, Power - Max: 460 W.
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IXGX55N120A3H1 | Hersteller : IXYS |
IGBTs Low-Frequency Range Low Vcesat w/ Diode |
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IXGX55N120A3H1 | Hersteller : IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 55A; 460W; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 55A Power dissipation: 460W Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 400A Mounting: THT Gate charge: 185nC Kind of package: tube Turn-on time: 70ns Turn-off time: 1253ns |
Produkt ist nicht verfügbar |