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IXGX82N120A3

IXGX82N120A3 IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADA05B5A3C9820&compId=IXGK(x)82N120A3.pdf?ci_sign=fbc08b8c0cc6e5d5e4e3183ea9feaad9775fef7e Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Anzahl je Verpackung: 1 Stücke
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Technische Details IXGX82N120A3 IXYS

Description: IGBT 1200V 260A 1250W PLUS247, Packaging: Tube, Package / Case: TO-247-3 Variant, Mounting Type: Through Hole, Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A, Supplier Device Package: PLUS247™-3, IGBT Type: PT, Td (on/off) @ 25°C: 34ns/265ns, Switching Energy: 5.5mJ (on), 12.5mJ (off), Test Condition: 600V, 80A, 2Ohm, 15V, Gate Charge: 340 nC, Part Status: Active, Current - Collector (Ic) (Max): 260 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 580 A, Power - Max: 1250 W.

Weitere Produktangebote IXGX82N120A3

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IXGX82N120A3 IXGX82N120A3 Hersteller : IXYS Description: IGBT 1200V 260A 1250W PLUS247
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Supplier Device Package: PLUS247™-3
IGBT Type: PT
Td (on/off) @ 25°C: 34ns/265ns
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Test Condition: 600V, 80A, 2Ohm, 15V
Gate Charge: 340 nC
Part Status: Active
Current - Collector (Ic) (Max): 260 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 580 A
Power - Max: 1250 W
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IXGX82N120A3 IXGX82N120A3 Hersteller : IXYS media-3321675.pdf IGBTs GenX3 1200V IGBTs
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IXGX82N120A3 IXGX82N120A3 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED99DADA05B5A3C9820&compId=IXGK(x)82N120A3.pdf?ci_sign=fbc08b8c0cc6e5d5e4e3183ea9feaad9775fef7e Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH