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IXGX82N120A3 IXYS
Hersteller: IXYS
Description: IGBT 1200V 260A 1250W PLUS247
Current - Collector Pulsed (Icm): 580 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 260 A
Part Status: Active
Gate Charge: 340 nC
Test Condition: 600V, 80A, 2Ohm, 15V
Switching Energy: 5.5mJ (on), 12.5mJ (off)
Td (on/off) @ 25°C: 34ns/265ns
IGBT Type: PT
Supplier Device Package: PLUS247™-3
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-247-3 Variant
Packaging: Tube
Power - Max: 1250 W
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Technische Details IXGX82N120A3 IXYS
Description: IGBT 1200V 260A 1250W PLUS247, Current - Collector Pulsed (Icm): 580 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector (Ic) (Max): 260 A, Part Status: Active, Gate Charge: 340 nC, Test Condition: 600V, 80A, 2Ohm, 15V, Switching Energy: 5.5mJ (on), 12.5mJ (off), Td (on/off) @ 25°C: 34ns/265ns, IGBT Type: PT, Supplier Device Package: PLUS247™-3, Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 82A, Input Type: Standard, Mounting Type: Through Hole, Package / Case: TO-247-3 Variant, Packaging: Tube, Power - Max: 1250 W.
Weitere Produktangebote IXGX82N120A3
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXGX82N120A3 | IXYS |
 IGBTs GenX3 1200V IGBTs |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 300 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXGX82N120A3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™ Type of transistor: IGBT Technology: GenX3™; PT Collector-emitter voltage: 1.2kV Collector current: 82A Power dissipation: 1.25kW Case: PLUS247™ Gate-emitter voltage: ±20V Pulsed collector current: 580A Mounting: THT Gate charge: 340nC Kind of package: tube Turn-on time: 109ns Turn-off time: 1.59µs |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXGX82N120A3 |
|
Hersteller: IXYS
IGBTs GenX3 1200V IGBTs
IGBTs GenX3 1200V IGBTs
Produkt ist nicht verfügbar
Mindestbestellmenge: 300 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXGX82N120A3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 1.2kV; 82A; 1.25kW; PLUS247™
Type of transistor: IGBT
Technology: GenX3™; PT
Collector-emitter voltage: 1.2kV
Collector current: 82A
Power dissipation: 1.25kW
Case: PLUS247™
Gate-emitter voltage: ±20V
Pulsed collector current: 580A
Mounting: THT
Gate charge: 340nC
Kind of package: tube
Turn-on time: 109ns
Turn-off time: 1.59µs
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH