IXKC19N60C5 IXYS
Hersteller: IXYSCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 19A
Case: ISOPLUS220™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 70nC
Reverse recovery time: 430ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXKC19N60C5 IXYS
Description: MOSFET N-CH 600V 19A ISOPLUS220, Packaging: Tube, Package / Case: ISOPLUS220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Tc), Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 1.1mA, Supplier Device Package: ISOPLUS220™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V.
Weitere Produktangebote IXKC19N60C5
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IXKC19N60C5 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 19A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1.1mA Supplier Device Package: ISOPLUS220™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 100 V |
Produkt ist nicht verfügbar |
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IXKC19N60C5 | Hersteller : IXYS |
MOSFET 19 Amps 600V 0.125 Rds |
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| IXKC19N60C5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 19A; ISOPLUS220™; 430ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 19A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 70nC Reverse recovery time: 430ns |
Produkt ist nicht verfügbar |