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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 21.05 EUR |
| 10+ | 15.73 EUR |
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Technische Details IXKC20N60C IXYS
Description: MOSFET N-CH 600V 15A ISOPLUS220, Packaging: Tube, Package / Case: ISOPLUS220™, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 1mA, Supplier Device Package: ISOPLUS220™, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V.
Weitere Produktangebote IXKC20N60C
| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IXKC20N60C | Hersteller : Littelfuse |
 Trans MOSFET N-CH Si 600V 15A 3-Pin(3+Tab) ISOPLUS 220 |
Produkt ist nicht verfügbar |
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IXKC20N60C | Hersteller : IXYS |
Description: MOSFET N-CH 600V 15A ISOPLUS220 Packaging: Tube Package / Case: ISOPLUS220™ Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 16A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: ISOPLUS220™ Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
Produkt ist nicht verfügbar |