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Technische Details IXKC25N80C IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS220, Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISOPLUS220™, Vgs(th) (Max) @ Id: 4V @ 2mA, Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: ISOPLUS220™, Packaging: Tube.
Weitere Produktangebote IXKC25N80C
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 TO-220 FULL PACK Транзистори |
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IXKC25N80C | Hersteller : IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS220 Input Capacitance (Ciss) (Max) @ Vds: 4600 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: ISOPLUS220™ Vgs(th) (Max) @ Id: 4V @ 2mA Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: ISOPLUS220™ Packaging: Tube |
Produkt ist nicht verfügbar |
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| IXKC25N80C | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; ISOPLUS220™; 550ns Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Case: ISOPLUS220™ Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC Reverse recovery time: 550ns |
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