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IXKF40N60SCD1

IXKF40N60SCD1 IXYS

littelfuse_discrete_mosfets_n-channel_super_junction_ixkf40n60scd1_datasheet.pdf.pdf
Hersteller: IXYS
Description: MOSFET N-CH 600V 41A I4PAC
Supplier Device Package: ISOPLUS i4-PAC™
Vgs(th) (Max) @ Id: 3.9V @ 3mA
Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: i4-Pac™-5 (3 Leads)
Packaging: Tube
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
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Technische Details IXKF40N60SCD1 IXYS

Description: MOSFET N-CH 600V 41A I4PAC, Supplier Device Package: ISOPLUS i4-PAC™, Vgs(th) (Max) @ Id: 3.9V @ 3mA, Rds On (Max) @ Id, Vgs: 70mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: i4-Pac™-5 (3 Leads), Packaging: Tube, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V, Drain to Source Voltage (Vdss): 600 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V.

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IXKF40N60SCD1 IXKF40N60SCD1 Hersteller : IXYS media-3319680.pdf MOSFET 40 Amps 600V
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