IXKG25N80C IXYS
Hersteller: IXYS
Description: MOSFET N-CH 800V 25A ISO264
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ISO264™
Vgs(th) (Max) @ Id: 4V @ 2mA
Power Dissipation (Max): 250W (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-264-3, TO-264AA
Packaging: Tube
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Technische Details IXKG25N80C IXYS
Description: MOSFET N-CH 800V 25A ISO264, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Drain to Source Voltage (Vdss): 800 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: ISO264™, Vgs(th) (Max) @ Id: 4V @ 2mA, Power Dissipation (Max): 250W (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-264-3, TO-264AA, Packaging: Tube.