Technische Details IXKH35N60C5 Littelfuse
Description: MOSFET N-CH 600V 35A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 3.9V @ 1.2mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V.
Weitere Produktangebote IXKH35N60C5
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IXKH35N60C5 | Hersteller : IXYS |
 Description: MOSFET N-CH 600V 35A TO247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 3.9V @ 1.2mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 100 V |
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IXKH35N60C5 | Hersteller : IXYS |
MOSFETs 35 Amps 600V |
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IXKH35N60C5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; 357W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Power dissipation: 357W Case: TO247-3 On-state resistance: 0.1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: super junction coolmos Gate charge: 60nC |
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