Produktrezensionen
Produktbewertung abgeben
Technische Details IXKH70N60C5 IXYS
Description: MOSFET N-CH 600V 70A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V, Vgs(th) (Max) @ Id: 3.5V @ 3mA, Supplier Device Package: TO-247AD, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V.
Weitere Produktangebote IXKH70N60C5
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXKH70N60C5 |
 MOSFET PWR N-CH 600V 70A TO247AD Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
|||
 |
IXKH70N60C5 | Hersteller : IXYS |
Description: MOSFET N-CH 600V 70A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 44A, 10V Vgs(th) (Max) @ Id: 3.5V @ 3mA Supplier Device Package: TO-247AD Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 190 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 100 V |
Produkt ist nicht verfügbar |
|
 |
IXKH70N60C5 | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 70A; 625W; TO247-3 Gate charge: 150nC Type of transistor: N-MOSFET On-state resistance: 45mΩ Drain current: 70A Kind of channel: enhancement Drain-source voltage: 600V Power dissipation: 625W Case: TO247-3 Features of semiconductor devices: super junction coolmos Kind of package: tube Mounting: THT Polarisation: unipolar |
Produkt ist nicht verfügbar |