auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 56.69 EUR |
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Technische Details IXKN40N60C IXYS
Description: MOSFET N-CH 600V 40A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.5mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V.
Weitere Produktangebote IXKN40N60C nach Preis ab 56.94 EUR bis 56.94 EUR
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IXKN40N60C | Hersteller : IXYS |
 Description: MOSFET N-CH 600V 40A SOT-227BPackaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 2.5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V |
auf Bestellung 7 Stücke: Lieferzeit 10-14 Tag (e) |
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IXKN40N60C | Hersteller : Littelfuse |
Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B |
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IXKN40N60C | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 40A Power dissipation: 290W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 70mΩ Gate charge: 250nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Electrical mounting: screw Mechanical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 650ns |
Produkt ist nicht verfügbar |