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IXKN40N60C

IXKN40N60C IXYS


media-3320496.pdf Hersteller: IXYS
Discrete Semiconductor Modules 40 Amps 600V
auf Bestellung 19 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+64.93 EUR
10+ 56.53 EUR
20+ 52.75 EUR
50+ 51 EUR
100+ 47.82 EUR
200+ 46.18 EUR
500+ 44.58 EUR
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Technische Details IXKN40N60C IXYS

Description: MOSFET N-CH 600V 40A SOT-227B, Packaging: Tube, Package / Case: SOT-227-4, miniBLOC, Mounting Type: Chassis Mount, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 3.9V @ 2.5mA, Supplier Device Package: SOT-227B, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 600 V, Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V.

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IXKN40N60C IXKN40N60C Hersteller : Littelfuse osfets_n-channel_super_junction_ixkn40n60c_datasheet.pdf.pdf Trans MOSFET N-CH 600V 40A 4-Pin SOT-227B
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IXKN40N60C IXKN40N60C Hersteller : IXYS IXKN40N60C.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXKN40N60C IXKN40N60C Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_super_junction_ixkn40n60c_datasheet.pdf.pdf Description: MOSFET N-CH 600V 40A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 500mA, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 2.5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 250 nC @ 10 V
Produkt ist nicht verfügbar
IXKN40N60C IXKN40N60C Hersteller : IXYS IXKN40N60C.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 600V; 40A; SOT227B; screw; 290W; 250nC
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 40A
Power dissipation: 290W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Gate charge: 250nC
Kind of channel: enhanced
Semiconductor structure: single transistor
Reverse recovery time: 650ns
Electrical mounting: screw
Mechanical mounting: screw
Type of module: MOSFET transistor
Produkt ist nicht verfügbar