IXKN75N60C IXYS
Hersteller: IXYSCategory: Transistor modules MOSFET
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor
Reverse recovery time: 580ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 77.05 EUR |
| 3+ | 74.83 EUR |
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Technische Details IXKN75N60C IXYS
Category: Transistor modules MOSFET, Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A, Technology: CoolMOS™, Polarisation: unipolar, Drain-source voltage: 600V, Drain current: 50A, Pulsed drain current: 250A, Power dissipation: 560W, Case: SOT227B, Gate-source voltage: ±20V, On-state resistance: 36mΩ, Gate charge: 500nC, Kind of channel: enhancement, Type of semiconductor module: MOSFET transistor, Mechanical mounting: screw, Electrical mounting: screw, Semiconductor structure: single transistor, Reverse recovery time: 580ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXKN75N60C nach Preis ab 74.83 EUR bis 77.05 EUR
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IXKN75N60C | Hersteller : IXYS |
Category: Transistor modules MOSFET Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 250A Power dissipation: 560W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 36mΩ Gate charge: 500nC Kind of channel: enhancement Type of semiconductor module: MOSFET transistor Mechanical mounting: screw Electrical mounting: screw Semiconductor structure: single transistor Reverse recovery time: 580ns |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IXKN75N60C Produktcode: 116581
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Description: MOSFET N-CH 600V 75A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V |
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