Weitere Produktangebote IXKN75N60C
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IXKN75N60C | Hersteller : Littelfuse |
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IXKN75N60C | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 250A Power dissipation: 560W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 36mΩ Gate charge: 500nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 580ns Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: CoolMOS™ Anzahl je Verpackung: 1 Stücke |
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IXKN75N60C | Hersteller : IXYS |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V Power Dissipation (Max): 560W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V |
Produkt ist nicht verfügbar |
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IXKN75N60C | Hersteller : IXYS |
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Produkt ist nicht verfügbar |
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IXKN75N60C | Hersteller : IXYS |
![]() Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A Polarisation: unipolar Drain-source voltage: 600V Drain current: 50A Pulsed drain current: 250A Power dissipation: 560W Case: SOT227B Gate-source voltage: ±20V On-state resistance: 36mΩ Gate charge: 500nC Kind of channel: enhancement Semiconductor structure: single transistor Reverse recovery time: 580ns Mechanical mounting: screw Type of semiconductor module: MOSFET transistor Electrical mounting: screw Technology: CoolMOS™ |
Produkt ist nicht verfügbar |