IXKN75N60C

Hersteller: IXYS/Littelfuse
N-канальний ПТ на шасі, Id = 75 А, Udss, В = 600, Qg, нКл = 500 @ 10 В, Rds = 36 мОм @ 50 A, 10 В, Tексп, °C = -40...+125, Ugs(th) = 3,9 В @ 5 мА,... Транзистори Корпус: SOT-227B Од. вим: шт
Anzahl je Verpackung: 10 Stücke

Транзистори

Hersteller: IXYS
Description: MOSFET N-CH 600V 75A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 50A, 10V
Power Dissipation (Max): 560W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 500 nC @ 10 V

Hersteller: IXYS
MOSFET Modules 75 Amps 600V

Hersteller: IXYS
Category: Transistor drivers
Description: Module; single transistor; 600V; 50A; SOT227B; screw; Idm: 250A
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 50A
Pulsed drain current: 250A
Power dissipation: 560W
Case: SOT227B
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Gate charge: 500nC
Kind of channel: enhancement
Reverse recovery time: 580ns
Type of semiconductor module: MOSFET transistor
Mechanical mounting: screw
Electrical mounting: screw
Semiconductor structure: single transistor