auf Bestellung 55 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 40.43 EUR |
| 10+ | 33.28 EUR |
| 30+ | 32.19 EUR |
| 60+ | 31.49 EUR |
| 120+ | 30.82 EUR |
| 270+ | 29.41 EUR |
| 510+ | 28.21 EUR |
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Technische Details IXKR25N80C IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V.
Weitere Produktangebote IXKR25N80C
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IXKR25N80C | Hersteller : Littelfuse |
 Trans MOSFET N-CH 800V 25A 3-Pin(3+Tab) ISOPLUS 247 |
Produkt ist nicht verfügbar |
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IXKR25N80C | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXKR25N80C | Hersteller : IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V |
Produkt ist nicht verfügbar |
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IXKR25N80C | Hersteller : IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC |
Produkt ist nicht verfügbar |