| Anzahl | Privatkunde |
|---|---|
| 1+ | 48.11 EUR |
| 10+ | 39.6 EUR |
| 30+ | 38.31 EUR |
| 60+ | 37.47 EUR |
| 120+ | 36.68 EUR |
| 270+ | 35 EUR |
| 510+ | 33.57 EUR |
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Technische Details IXKR25N80C IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V, Vgs(th) (Max) @ Id: 4V @ 2mA, Supplier Device Package: ISOPLUS247™, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 800 V, Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V.
Weitere Produktangebote IXKR25N80C
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| IXKR25N80C |
 CoolMOS Power MOSFET Транзистори |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
 |
IXKR25N80C | IXYS |
Description: MOSFET N-CH 800V 25A ISOPLUS247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: ISOPLUS247™ Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
IXKR25N80C | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™ Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 25A Power dissipation: 250W Case: ISOPLUS247™ Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 180nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXKR25N80C |
|
CoolMOS Power MOSFET Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXKR25N80C |
Hersteller: IXYS
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Description: MOSFET N-CH 800V 25A ISOPLUS247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 150mOhm @ 18A, 10V
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: ISOPLUS247™
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 355 nC @ 10 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 30 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IXKR25N80C |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 25A; 250W; ISOPLUS247™
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 25A
Power dissipation: 250W
Case: ISOPLUS247™
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 180nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH