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IXRFSM12N100

IXRFSM12N100 IXYS


IXRFSM12N100_datasheet-1146935.pdf Hersteller: IXYS
RF MOSFET Transistors SMPD RF Power MOSFET
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Technische Details IXRFSM12N100 IXYS

Description: MOSFET N-CH 1000V 12A 16SMPD, Packaging: Tube, Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V, Power Dissipation (Max): 940W, Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: 16-SMPD, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 15V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V.

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IXRFSM12N100 IXRFSM12N100 Hersteller : IXYS-RF Description: MOSFET N-CH 1000V 12A 16SMPD
Packaging: Tube
Package / Case: 16-BESOP (0.790", 20.11mm Width), 15 Leads, Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 6A, 15V
Power Dissipation (Max): 940W
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 16-SMPD
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 15V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2875 pF @ 800 V
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