IXSA110N65L2-7TR IXYS
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
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Technische Details IXSA110N65L2-7TR IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V.
Weitere Produktangebote IXSA110N65L2-7TR nach Preis ab 12.38 EUR bis 23.61 EUR
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IXSA110N65L2-7TR | IXYS |
Description: 650V 25M (110A @ 25C) SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSA110N65L2-7TR | IXYS |
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXSA110N65L2-7TR |
|
Hersteller: IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.31 EUR |
| 10+ | 16.22 EUR |
| 100+ | 12.9 EUR |
| IXSA110N65L2-7TR |
|
Hersteller: IXYS
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.61 EUR |
| 10+ | 16.42 EUR |
| 100+ | 13.07 EUR |
| 500+ | 12.38 EUR |