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IXSA110N65L2-7TR

IXSA110N65L2-7TR IXYS

Littelfuse_09-11-2025_Power_Semiconductor_SiC_MOSFET_IXSA110N65L2-7TR_Datasheet.pdf Hersteller: IXYS
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
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Technische Details IXSA110N65L2-7TR IXYS

Description: 650V 25M (110A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V.

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IXSA110N65L2-7TR IXSA110N65L2-7TR Hersteller : IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXSA110N65L2-7TR IXSA110N65L2-7TR Hersteller : IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IXSA110N65L2-7TR IXSA110N65L2-7TR Hersteller : IXYS ixsa110n65l2-7tr-datasheet?assetguid=923b711e-d1bd-47db-883a-a89e0dbb7cd7 Description: 650V 25M (110A @ 25C) SIC MOSFET
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 111A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V
Power Dissipation (Max): 600W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH