auf Bestellung 66 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.35 EUR |
| 10+ | 7.18 EUR |
| 100+ | 5.79 EUR |
| 500+ | 5.14 EUR |
| 800+ | 4.4 EUR |
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Technische Details IXSA20N120L2-7TR IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V.
Weitere Produktangebote IXSA20N120L2-7TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXSA20N120L2-7TR | Hersteller : IXYS |
 Description: 1200V 60M (20A @25C) SIC MOSFETPackaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V |
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IXSA20N120L2-7TR | Hersteller : IXYS |
Description: 1200V 60M (20A @25C) SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V |
Produkt ist nicht verfügbar |
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IXSA20N120L2-7TR | Hersteller : IXYS |
SiC MOSFETs 1200V 60mohm (20A a.25C) SiC MOSFET in TO263-7L |
Produkt ist nicht verfügbar |