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IXSA40N65L2-7TR

IXSA40N65L2-7TR IXYS

power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+6.52 EUR
1600+6.5 EUR
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXSA40N65L2-7TR IXYS

Description: 650V 60M (40A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Tc), Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V, Power Dissipation (Max): 174W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V.

Weitere Produktangebote IXSA40N65L2-7TR nach Preis ab 7.56 EUR bis 16.06 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
IXSA40N65L2-7TR IXSA40N65L2-7TR IXYS power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4 Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.01 EUR
10+10.91 EUR
100+8.03 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXSA40N65L2-7TR IXSA40N65L2-7TR IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSA40N65L2-7TR_Datasheet.pdf SiC MOSFETs SiC MOSFET in TO263-7L
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.06 EUR
10+10.97 EUR
100+8.07 EUR
500+7.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXSA40N65L2-7TR power-semiconductor-sic-mosfet-ixsa40n65l2-7tr-datasheet?assetguid=14bc6aa8-1f68-4e9b-bc8f-1b3f568b17e4
IXSA40N65L2-7TR
Hersteller: IXYS
Description: 650V 60M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 78mOhm @ 15A, 18V
Power Dissipation (Max): 174W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1218 pF @ 600 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.01 EUR
10+10.91 EUR
100+8.03 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IXSA40N65L2-7TR Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSA40N65L2-7TR_Datasheet.pdf
IXSA40N65L2-7TR
Hersteller: IXYS
SiC MOSFETs SiC MOSFET in TO263-7L
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+16.06 EUR
10+10.97 EUR
100+8.07 EUR
500+7.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH