IXSA60N65L2-7TR IXYS
Hersteller: IXYSDescription: 650V 40M (80A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 6.16 EUR |
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Technische Details IXSA60N65L2-7TR IXYS
Description: 650V 40M (80A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V, Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 7.5mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V.
Weitere Produktangebote IXSA60N65L2-7TR nach Preis ab 6.67 EUR bis 13.89 EUR
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IXSA60N65L2-7TR | Hersteller : IXYS |
Description: 650V 40M (80A @ 25C) SIC MOSFET Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-263-7 Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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IXSA60N65L2-7TR | Hersteller : IXYS |
SiC MOSFETs 650V 40mohm (80A a. 25C) SiC MOSFET in TO267-7L |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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