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IXSA80N120L2-7TR

IXSA80N120L2-7TR IXYS


Littelfuse_01-31-2025_Power_Semiconductor_SiC_MOSFET_IXSA80N120L2-7_Datasheet.pdf Hersteller: IXYS
SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
auf Bestellung 539 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.01 EUR
10+15.47 EUR
100+12.13 EUR
500+11.49 EUR
800+11.12 EUR
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Technische Details IXSA80N120L2-7TR IXYS

Description: 1200V 30m (80A @ 25C) SiC MOSF, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 395W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TO-263-7, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V.

Weitere Produktangebote IXSA80N120L2-7TR nach Preis ab 9.62 EUR bis 19.69 EUR

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IXSA80N120L2-7TR Hersteller : IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+9.62 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
IXSA80N120L2-7TR Hersteller : IXYS ixsa80n120l2-7-datasheet?assetguid=10a2866b-8890-46f3-a5cb-5bb83f2d390b Description: 1200V 30m (80A @ 25C) SiC MOSF
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Supplier Device Package: TO-263-7
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+19.69 EUR
10+13.7 EUR
100+10.32 EUR
Im Einkaufswagen  Stück im Wert von  UAH