| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.62 EUR |
| 10+ | 18.41 EUR |
| 100+ | 14.43 EUR |
| 500+ | 13.67 EUR |
| 800+ | 13.23 EUR |
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Technische Details IXSA80N120L2-7TR IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.5V @ 12mA, Power Dissipation (Max): 395W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXSA80N120L2-7TR nach Preis ab 11.45 EUR bis 23.43 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
| IXSA80N120L2-7TR | IXYS |
 Description: 1200V 30m (80A @ 25C) SiC MOSFInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 12mA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
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| IXSA80N120L2-7TR | IXYS |
Description: 1200V 30m (80A @ 25C) SiC MOSF Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 12mA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXSA80N120L2-7TR |
|
Hersteller: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
Description: 1200V 30m (80A @ 25C) SiC MOSF
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 11.45 EUR |
| IXSA80N120L2-7TR |
|
Hersteller: IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Description: 1200V 30m (80A @ 25C) SiC MOSF
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V
Drain to Source Voltage (Vdss): 1200 V
Vgs (Max): +20V, -5V
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Supplier Device Package: TO-263-7
Vgs(th) (Max) @ Id: 4.5V @ 12mA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Current - Continuous Drain (Id) @ 25°C: 79A (Tc)
FET Type: N-Channel
Technology: SiC (Silicon Carbide Junction Transistor)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.43 EUR |
| 10+ | 16.3 EUR |
| 100+ | 12.28 EUR |