| Anzahl | Preis |
|---|---|
| 1+ | 19.01 EUR |
| 10+ | 15.47 EUR |
| 100+ | 12.13 EUR |
| 500+ | 11.49 EUR |
| 800+ | 11.12 EUR |
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Technische Details IXSA80N120L2-7TR IXYS
Description: 1200V 30m (80A @ 25C) SiC MOSF, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-263-7, Vgs(th) (Max) @ Id: 4.5V @ 12mA, Power Dissipation (Max): 395W (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Current - Continuous Drain (Id) @ 25°C: 79A (Tc), FET Type: N-Channel, Technology: SiC (Silicon Carbide Junction Transistor), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Packaging: Tape & Reel (TR).
Weitere Produktangebote IXSA80N120L2-7TR nach Preis ab 9.62 EUR bis 19.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IXSA80N120L2-7TR | Hersteller : IXYS |
 Description: 1200V 30m (80A @ 25C) SiC MOSFInput Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 12mA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXSA80N120L2-7TR | Hersteller : IXYS |
Description: 1200V 30m (80A @ 25C) SiC MOSF Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-263-7 Vgs(th) (Max) @ Id: 4.5V @ 12mA Power Dissipation (Max): 395W (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Current - Continuous Drain (Id) @ 25°C: 79A (Tc) FET Type: N-Channel Technology: SiC (Silicon Carbide Junction Transistor) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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