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Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 16.4 EUR |
| 10+ | 12.83 EUR |
| 100+ | 10.68 EUR |
| 500+ | 9.52 EUR |
| 1000+ | 8.1 EUR |
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Technische Details IXSG110N65L2K IXYS
Description: 650V 25M (110A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 111A (Tc), Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V, Power Dissipation (Max): 600W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 12mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V.
Weitere Produktangebote IXSG110N65L2K
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IXSG110N65L2K | Hersteller : IXYS |
 Description: 650V 25M (110A @ 25C) SIC MOSFETPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V |
Produkt ist nicht verfügbar |
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IXSG110N65L2K | Hersteller : IXYS |
Description: 650V 25M (110A @ 25C) SIC MOSFET Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 111A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 40A, 18V Power Dissipation (Max): 600W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 12mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 600 V |
Produkt ist nicht verfügbar |