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IXSG60N65L2K

IXSG60N65L2K IXYS

power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Hersteller: IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.64 EUR
10+9.33 EUR
100+7.42 EUR
Mindestbestellmenge: 2
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Technische Details IXSG60N65L2K IXYS

Description: 650V 40M (40A @ 25C) SIC MOSFET, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V, Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 7.5mA, Supplier Device Package: TOLL, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V.

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IXSG60N65L2K IXSG60N65L2K Hersteller : IXYS Littlefuse_7-24-2025_Power_Semiconductor_SiC_MOSFET_IXSG60N65L2K_Datasheet.pdf SiC MOSFETs 650V 40mohm (40A a. 25C) SiC MOSFET in TOLL
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+13.68 EUR
10+9.94 EUR
100+8.27 EUR
500+7.39 EUR
1000+6.56 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXSG60N65L2K IXSG60N65L2K Hersteller : IXYS power-semiconductor-sic-mosfet-ixsg60n65l2k-datasheet?assetguid=fc242485-266f-41e4-ac41-70a3366d5139 Description: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 600 V
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Im Einkaufswagen  Stück im Wert von  UAH