IXSH20N120L2KHV IXYS

Description: 1200V 60M (20A @25C) SIC MOSFET, Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.5V @ 2mA, Power Dissipation (Max): 136W (Tc).