| Anzahl | Preis |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 6.74 EUR |
| 100+ | 5.46 EUR |
| 450+ | 4.82 EUR |
| 900+ | 4.14 EUR |
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Technische Details IXSH20N120L2KHV IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET, Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), FET Type: N-Channel, Technology: SiCFET (Silicon Carbide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-4, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): +20V, -5V, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Supplier Device Package: TO-247-4L, Vgs(th) (Max) @ Id: 4.5V @ 2mA, Power Dissipation (Max): 136W (Tc).
Weitere Produktangebote IXSH20N120L2KHV nach Preis ab 6.39 EUR bis 9.52 EUR
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IXSH20N120L2KHV | Hersteller : IXYS |
 Description: 1200V 60M (20A @25C) SIC MOSFETRds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) FET Type: N-Channel Technology: SiCFET (Silicon Carbide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-4 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): +20V, -5V Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Supplier Device Package: TO-247-4L Vgs(th) (Max) @ Id: 4.5V @ 2mA Power Dissipation (Max): 136W (Tc) |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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