auf Bestellung 550 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.92 EUR |
| 10+ | 6.74 EUR |
| 100+ | 5.46 EUR |
| 450+ | 4.82 EUR |
| 900+ | 4.14 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXSH20N120L2KHV IXYS
Description: 1200V 60M (20A @25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V, Power Dissipation (Max): 136W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 2mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V.
Weitere Produktangebote IXSH20N120L2KHV
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXSH20N120L2KHV | Hersteller : IXYS |
 Description: 1200V 60M (20A @25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 208mOhm @ 5A, 18V Power Dissipation (Max): 136W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 2mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 580 pF @ 800 V |
Produkt ist nicht verfügbar |
|
|
|
IXSH20N120L2KHV | Hersteller : IXYS |
SiC MOSFETs 1200V 60mohm (20A a.25C) SiC MOSFET in TO247-4L |
Produkt ist nicht verfügbar |