IXSH30N60BD1 IXYS
Hersteller: IXYS
Description: IGBT 600V 55A TO-247AD
Power - Max: 200 W
Current - Collector Pulsed (Icm): 110 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 55 A
Gate Charge: 100 nC
Test Condition: 480V, 30A, 4.7Ohm, 15V
Switching Energy: 1.5mJ (off)
Td (on/off) @ 25°C: 30ns/150ns
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Reverse Recovery Time (trr): 50 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details IXSH30N60BD1 IXYS
Description: IGBT 600V 55A TO-247AD, Power - Max: 200 W, Current - Collector Pulsed (Icm): 110 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 55 A, Gate Charge: 100 nC, Test Condition: 480V, 30A, 4.7Ohm, 15V, Switching Energy: 1.5mJ (off), Td (on/off) @ 25°C: 30ns/150ns, Supplier Device Package: TO-247AD, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A, Reverse Recovery Time (trr): 50 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-247-3, Packaging: Tube.
Weitere Produktangebote IXSH30N60BD1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IXSH30N60BD1 | Hersteller : IXYS |
IGBT Transistors 55 Amps 600V 2 Rds |
Produkt ist nicht verfügbar |

