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IXSH30N60BD1 IXYS
Hersteller: IXYSDescription: IGBT 600V 55A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 30ns/150ns
Switching Energy: 1.5mJ (off)
Test Condition: 480V, 30A, 4.7Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 55 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 200 W
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Technische Details IXSH30N60BD1 IXYS
Description: IGBT 600V 55A 200W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 55A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 30ns/150ns, Switching Energy: 1.5mJ (off), Test Condition: 480V, 30A, 4.7Ohm, 15V, Gate Charge: 100 nC, Current - Collector (Ic) (Max): 55 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 110 A, Power - Max: 200 W.
Weitere Produktangebote IXSH30N60BD1
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IXSH30N60BD1 | Hersteller : IXYS |
IGBT Transistors 55 Amps 600V 2 Rds |
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