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| Anzahl | Preis |
|---|---|
| 1+ | 13.16 EUR |
| 120+ | 12.65 EUR |
| 510+ | 12.41 EUR |
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Technische Details IXSH40N120L2KHV IXYS
Description: 1200V 80M (40A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V.
Weitere Produktangebote IXSH40N120L2KHV
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IXSH40N120L2KHV | Hersteller : IXYS |
 Description: 1200V 80M (40A @ 25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V |
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