IXSH40N120L2KHV IXYS
Hersteller: IXYSDescription: 1200V 80M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.36 EUR |
| 10+ | 8.43 EUR |
| 450+ | 5.37 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXSH40N120L2KHV IXYS
Description: 1200V 80M (40A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), Rds On (Max) @ Id, Vgs: 104mOhm @ 10A, 18V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1214 pF @ 800 V.
Weitere Produktangebote IXSH40N120L2KHV nach Preis ab 12.41 EUR bis 13.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXSH40N120L2KHV | Hersteller : IXYS |
SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
|