IXSH60N65L2KHV IXYS
Hersteller: IXYSDescription: 650V 40M (40A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V
Power Dissipation (Max): 249W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 7.5mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +20V, -5V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 13.64 EUR |
| 10+ | 9.34 EUR |
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Technische Details IXSH60N65L2KHV IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V, Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 7.5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V.
Weitere Produktangebote IXSH60N65L2KHV nach Preis ab 6.74 EUR bis 13.69 EUR
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IXSH60N65L2KHV | Hersteller : IXYS |
SiC MOSFETs SiC MOSFET in TO247-4L HV |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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