auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 13.69 EUR |
| 10+ | 10.19 EUR |
| 100+ | 8.48 EUR |
| 450+ | 7.57 EUR |
| 900+ | 6.74 EUR |
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Technische Details IXSH60N65L2KHV IXYS
Description: 650V 40M (40A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-4, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V, Power Dissipation (Max): 249W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 7.5mA, Supplier Device Package: TO-247-4L, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +20V, -5V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V.
Weitere Produktangebote IXSH60N65L2KHV nach Preis ab 9.51 EUR bis 13.89 EUR
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IXSH60N65L2KHV | Hersteller : IXYS |
 Description: 650V 40M (40A @ 25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 53mOhm @ 20A, 18V Power Dissipation (Max): 249W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 7.5mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +20V, -5V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 94.7 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 600 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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