IXSJ25N120R1 IXYS
Hersteller: IXYSDescription: 1200V 62M (25A @ 25C) SIC MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V
Power Dissipation (Max): 75.3W (Tc)
Vgs(th) (Max) @ Id: 4.8V @ 5.3mA
Supplier Device Package: ISO247-3L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +21V, -4V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V
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Technische Details IXSJ25N120R1 IXYS
Description: 1200V 62M (25A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Power Dissipation (Max): 75.3W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 5.3mA, Supplier Device Package: ISO247-3L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V.
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IXSJ25N120R1 | Hersteller : IXYS |
SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L |
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