IXSJ25N120R1 IXYS
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 20.8 EUR |
| 10+ | 15.52 EUR |
| 120+ | 13.43 EUR |
| 510+ | 12.71 EUR |
| 1020+ | 10.81 EUR |
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Technische Details IXSJ25N120R1 IXYS
Description: 1200V 62M (25A @ 25C) SIC MOSFET, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Tc), Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V, Power Dissipation (Max): 75.3W (Tc), Vgs(th) (Max) @ Id: 4.8V @ 5.3mA, Supplier Device Package: ISO247-3L, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +21V, -4V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V.
Weitere Produktangebote IXSJ25N120R1
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IXSJ25N120R1 | Hersteller : IXYS |
 Description: 1200V 62M (25A @ 25C) SIC MOSFETPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 81mOhm @ 12A, 18V Power Dissipation (Max): 75.3W (Tc) Vgs(th) (Max) @ Id: 4.8V @ 5.3mA Supplier Device Package: ISO247-3L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +21V, -4V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1435 pF @ 800 V |
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