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IXTA05N100HV

IXTA05N100HV IXYS


pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
Anzahl je Verpackung: 1 Stücke
auf Bestellung 290 Stücke:

Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+4.93 EUR
17+4.45 EUR
21+3.53 EUR
22+3.33 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IXTA05N100HV IXYS

Description: MOSFET N-CH 1000V 750MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.

Weitere Produktangebote IXTA05N100HV nach Preis ab 3.33 EUR bis 6.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IXTA05N100HV IXTA05N100HV Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A389CFC3007D5820&compId=IXTA(P)05N100_HV.pdf?ci_sign=7a5ec5e1cee1b6c6154e445efc3fb4608695a56f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 710ns
Features of semiconductor devices: standard power mosfet
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+4.93 EUR
17+4.45 EUR
21+3.53 EUR
22+3.33 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
IXTA05N100HV IXTA05N100HV Hersteller : IXYS media-3320619.pdf MOSFETs High Voltage Power MOSFET
auf Bestellung 1632 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.39 EUR
10+5.84 EUR
50+4.93 EUR
500+4.84 EUR
1000+4.49 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IXTA05N100HV IXTA05N100HV Hersteller : Littelfuse te_mosfets_n-channel_standard_ixta05n100hv_datasheet.pdf.pdf Trans MOSFET N-CH Si 1KV 0.75A
auf Bestellung 2800 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
IXTA05N100HV IXTA05N100HV Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixta05n100-datasheet?assetguid=32773929-b0c4-47ee-818f-306068b1c745 Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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