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IXTA05N100HV

IXTA05N100HV IXYS

IXTA(P)05N100_HV.pdf Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
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Technische Details IXTA05N100HV IXYS

Description: MOSFET N-CH 1000V 750MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 750mA (Tc), Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V, Power Dissipation (Max): 40W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V.

Weitere Produktangebote IXTA05N100HV nach Preis ab 3.35 EUR bis 7.81 EUR

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IXTA05N100HV IXTA05N100HV Hersteller : IXYS IXTA(P)05N100_HV.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.75A; 40W; TO263HV; 710ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.75A
Power dissipation: 40W
Case: TO263HV
On-state resistance: 17Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: standard power mosfet
Reverse recovery time: 710ns
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
15+4.93 EUR
17+ 4.45 EUR
21+ 3.53 EUR
22+ 3.35 EUR
Mindestbestellmenge: 15
IXTA05N100HV IXTA05N100HV Hersteller : IXYS media-3320619.pdf MOSFET High Voltage Power MOSFET
auf Bestellung 1699 Stücke:
Lieferzeit 601-605 Tag (e)
Anzahl Preis ohne MwSt
1+7.81 EUR
10+ 6.56 EUR
50+ 6.2 EUR
100+ 5.3 EUR
250+ 5.02 EUR
500+ 4.72 EUR
1000+ 4.07 EUR
IXTA05N100HV IXTA05N100HV Hersteller : Littelfuse te_mosfets_n-channel_standard_ixta05n100hv_datasheet.pdf.pdf Trans MOSFET N-CH Si 1KV 0.75A
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)
IXTA05N100HV IXTA05N100HV Hersteller : IXYS littelfuse_discrete_mosfets_n-channel_standard_ixta05n100_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 750MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Tc)
Rds On (Max) @ Id, Vgs: 17Ohm @ 375mA, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 260 pF @ 25 V
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