IXTA08N100D2-TRL IXYS

Description: MOSFET N-CH 1000V 800MA TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tj), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: TO-263 (D2Pak), Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.