IXTA08N100D2 Ixys Corporation
| Anzahl | Privatkunde |
|---|---|
| 35+ | 5.26 EUR |
| 41+ | 4.41 EUR |
| 50+ | 4.18 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
35 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA08N100D2 Ixys Corporation
Description: MOSFET N-CH 1000V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote IXTA08N100D2 nach Preis ab 3.44 EUR bis 9.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
IXTA08N100D2 | Littelfuse |
 Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||
 |
IXTA08N100D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 1000V 800MA |
auf Bestellung 2750 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IXTA08N100D2 | IXYS |
Description: MOSFET N-CH 1000V 800MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 133 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||
 |
IXTA08N100D2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1kV Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 21Ω Mounting: SMD Kind of package: tube Kind of channel: depletion Gate charge: 325nC |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA08N100D2 |
|
Hersteller: Littelfuse
Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
Trans MOSFET N-CH 1KV 0.8A 3-Pin(2+Tab) D2PAK
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 6.14 EUR |
| IXTA08N100D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 1000V 800MA
MOSFETs N-CH MOSFETS (D2) 1000V 800MA
auf Bestellung 2750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.82 EUR |
| 10+ | 4.63 EUR |
| 100+ | 4.14 EUR |
| 500+ | 3.67 EUR |
| 5000+ | 3.44 EUR |
| IXTA08N100D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Description: MOSFET N-CH 1000V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
auf Bestellung 133 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.28 EUR |
| 10+ | 6.12 EUR |
| 50+ | 4.76 EUR |
| 100+ | 4.33 EUR |
| IXTA08N100D2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1kV; 0.8A; 60W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 0.8A
Power dissipation: 60W
Case: TO263
On-state resistance: 21Ω
Mounting: SMD
Kind of package: tube
Kind of channel: depletion
Gate charge: 325nC
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)