| Anzahl | Preis |
|---|---|
| 1+ | 6 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.99 EUR |
| 500+ | 2.9 EUR |
| 1000+ | 2.75 EUR |
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Technische Details IXTA08N100D2 IXYS
Description: MOSFET N-CH 1000V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote IXTA08N100D2 nach Preis ab 2.31 EUR bis 7.04 EUR
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IXTA08N100D2 | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 800MA TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 5916 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA08N100D2 |
MOSFET N-CH 1000V 800MA TO-263 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |