| Anzahl | Preis |
|---|---|
| 1+ | 8.27 EUR |
| 10+ | 5.1 EUR |
| 100+ | 4.42 EUR |
| 500+ | 3.84 EUR |
| 1000+ | 3.68 EUR |
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Technische Details IXTA08N100D2HV IXYS
Description: MOSFET N-CH 1000V 800MA TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tj), Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 25µA, Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V.
Weitere Produktangebote IXTA08N100D2HV nach Preis ab 3.44 EUR bis 8.69 EUR
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IXTA08N100D2HV | Hersteller : IXYS |
 Description: MOSFET N-CH 1000V 800MA TO263HVPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tj) Rds On (Max) @ Id, Vgs: 21Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: TO-263HV Drive Voltage (Max Rds On, Min Rds On): 0V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 14.6 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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