IXTA08N120P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1200V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 6.48 EUR |
| 50+ | 5.13 EUR |
| 100+ | 4.4 EUR |
| 500+ | 3.91 EUR |
| 1000+ | 3.35 EUR |
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Technische Details IXTA08N120P IXYS
Description: MOSFET N-CH 1200V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 25Ohm @ 500mA, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 25 V.
Weitere Produktangebote IXTA08N120P nach Preis ab 5.86 EUR bis 6.53 EUR
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IXTA08N120P | Hersteller : IXYS |
MOSFET 0.8 Amps 1200V 25 Rds |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.8A Power dissipation: 50W Case: TO263 Gate-source voltage: ±30V On-state resistance: 25Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 900ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA08N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1.2kV; 0.8A; 50W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 0.8A Power dissipation: 50W Case: TO263 Gate-source voltage: ±30V On-state resistance: 25Ω Mounting: SMD Gate charge: 14nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 900ns |
Produkt ist nicht verfügbar |