IXTA08N50D2 Littelfuse Inc.
Hersteller: Littelfuse Inc.Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 445 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.78 EUR |
| 50+ | 2.30 EUR |
| 100+ | 2.26 EUR |
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Technische Details IXTA08N50D2 Littelfuse Inc.
Description: MOSFET N-CH 500V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote IXTA08N50D2 nach Preis ab 2.45 EUR bis 4.21 EUR
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IXTA08N50D2 | Hersteller : IXYS |
MOSFETs N-CH MOSFETS (D2) 500V 800MA |
auf Bestellung 732 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) TO-263AA |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA08N50D2 Produktcode: 118357
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Transistoren > MOSFET N-CH |
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |