IXTA08N50D2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 4.66 EUR |
| 50+ | 3.7 EUR |
| 100+ | 3.17 EUR |
| 500+ | 2.82 EUR |
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Technische Details IXTA08N50D2 IXYS
Description: MOSFET N-CH 500V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote IXTA08N50D2 nach Preis ab 2.45 EUR bis 4.7 EUR
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IXTA08N50D2 | Hersteller : IXYS |
MOSFET N-CH MOSFETS (D2) 500V 800MA |
auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N50D2 | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) TO-263AA |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA08N50D2 Produktcode: 118357 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |