auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.63 EUR |
10+ | 4.08 EUR |
50+ | 3.57 EUR |
100+ | 3.01 EUR |
250+ | 2.92 EUR |
500+ | 2.75 EUR |
1000+ | 2.45 EUR |
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Technische Details IXTA08N50D2 IXYS
Description: MOSFET N-CH 500V 800MA TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 800mA (Tc), Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 60W (Tc), Supplier Device Package: TO-263AA, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V.
Weitere Produktangebote IXTA08N50D2 nach Preis ab 2.85 EUR bis 4.73 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA08N50D2 | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 500V 800MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 905 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N50D2 | Hersteller : Littelfuse | Trans MOSFET N-CH 500V 0.8A 3-Pin(2+Tab) TO-263AA |
auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA08N50D2 Produktcode: 118357 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA08N50D2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO263; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO263 On-state resistance: 4.6Ω Mounting: SMD Gate charge: 312nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 11ns |
Produkt ist nicht verfügbar |