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Technische Details IXTA10P50P IXYS
Description: MOSFET P-CH 500V 10A TO263, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 500 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 10A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Packaging: Tube.
Weitere Produktangebote IXTA10P50P
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IXTA10P50P | Hersteller : IXYS |
 Description: MOSFET P-CH 500V 10A TO263Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1Ohm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Packaging: Tube |
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