auf Bestellung 129 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.59 EUR |
| 10+ | 4.28 EUR |
| 100+ | 3.7 EUR |
| 500+ | 3.34 EUR |
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Technische Details IXTA12N50P IXYS
Description: MOSFET N-CH 500V 12A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXTA12N50P nach Preis ab 2.97 EUR bis 7.59 EUR
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IXTA12N50P | Hersteller : IXYS |
Description: MOSFET N-CH 500V 12A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V |
auf Bestellung 700 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA12N50P | Hersteller : Littelfuse |
Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IXTA12N50P | Hersteller : IXYS |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 200W Case: TO263 Mounting: SMD Kind of package: tube Gate charge: 29nC Reverse recovery time: 300ns On-state resistance: 0.5Ω Kind of channel: enhancement Technology: Polar™ Drain current: 12A Gate-source voltage: ±30V Drain-source voltage: 500V |
Produkt ist nicht verfügbar |

