IXTA12N50P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 500V 12A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 524 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 9.28 EUR |
| 50+ | 7.35 EUR |
| 100+ | 6.3 EUR |
| 500+ | 5.6 EUR |
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Technische Details IXTA12N50P IXYS
Description: MOSFET N-CH 500V 12A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 500mOhm @ 6A, 10V, Power Dissipation (Max): 200W (Tc), Vgs(th) (Max) @ Id: 5.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 500 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V.
Weitere Produktangebote IXTA12N50P nach Preis ab 4.94 EUR bis 9.46 EUR
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IXTA12N50P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns Anzahl je Verpackung: 1 Stücke |
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IXTA12N50P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 500V; 12A; 200W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Power dissipation: 200W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 29nC Kind of package: tube Kind of channel: enhanced Reverse recovery time: 300ns |
Produkt ist nicht verfügbar |