Technische Details IXTA12N65X2 Littelfuse
Description: MOSFET N-CH 650V 12A TO263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Tc), Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V, Power Dissipation (Max): 180W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V, Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10, Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25.
Weitere Produktangebote IXTA12N65X2
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IXTA12N65X2 | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 270ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA12N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 12A TO263AA Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 300mOhm @ 6A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
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IXTA12N65X2 | Hersteller : IXYS |
MOSFET MSFT N-CH ULTRA JNCT X2 3&44 |
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IXTA12N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 180W; TO263; 270ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 180W Case: TO263 On-state resistance: 0.3Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 270ns |
Produkt ist nicht verfügbar |