auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 9.24 EUR |
| 10+ | 7.96 EUR |
| 100+ | 7.83 EUR |
| 500+ | 4.86 EUR |
| 800+ | 4.47 EUR |
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Technische Details IXTA130N10T-TRL IXYS
Description: MOSFET N-CH 100V 130A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 130A (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V, Power Dissipation (Max): 360W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IXTA130N10T-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| IXTA130N10T-TRL | Hersteller : IXYS |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 77ns Anzahl je Verpackung: 1 Stücke |
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IXTA130N10T-TRL | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 130A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA130N10T-TRL | Hersteller : Littelfuse Inc. |
Description: MOSFET N-CH 100V 130A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 130A (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 25A, 10V Power Dissipation (Max): 360W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 104 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
Produkt ist nicht verfügbar |
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| IXTA130N10T-TRL | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchMV™; unipolar; 100V; 130A; Idm: 350A Type of transistor: N-MOSFET Technology: TrenchMV™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 130A Pulsed drain current: 350A Power dissipation: 360W Case: TO263 Gate-source voltage: ±30V On-state resistance: 9.1mΩ Mounting: SMD Gate charge: 104nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 77ns |
Produkt ist nicht verfügbar |