IXTA140N12T2 IXYS
Hersteller: IXYSDescription: MOSFET N-CH 120V 140A TO263
Packaging: Tube
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 140A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V
Power Dissipation (Max): 577W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V
auf Bestellung 1400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 50+ | 8.46 EUR |
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Technische Details IXTA140N12T2 IXYS
Description: MOSFET N-CH 120V 140A TO263, Packaging: Tube, Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 140A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 70A, 10V, Power Dissipation (Max): 577W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 174 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 25 V.
Weitere Produktangebote IXTA140N12T2 nach Preis ab 4.12 EUR bis 8.94 EUR
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IXTA140N12T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 577W Polarisation: unipolar Gate charge: 174nC Kind of channel: enhancement Reverse recovery time: 65ns Drain-source voltage: 120V Drain current: 140A On-state resistance: 10mΩ Anzahl je Verpackung: 1 Stücke |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTA140N12T2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 140A; 577W; TO263; 65ns Case: TO263 Mounting: SMD Kind of package: tube Features of semiconductor devices: thrench gate power mosfet Type of transistor: N-MOSFET Power dissipation: 577W Polarisation: unipolar Gate charge: 174nC Kind of channel: enhancement Reverse recovery time: 65ns Drain-source voltage: 120V Drain current: 140A On-state resistance: 10mΩ |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA140N12T2 | Hersteller : Littelfuse |
Power MOSFET |
Produkt ist nicht verfügbar |
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IXTA140N12T2 | Hersteller : IXYS |
MOSFETs TO263 120V 140A N-CH TRENCH |
Produkt ist nicht verfügbar |