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Technische Details IXTA16N50P-TRL IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns, Type of transistor: N-MOSFET, Drain-source voltage: 500V, Drain current: 16A, Power dissipation: 300W, Case: D2PAK; TO263, Gate-source voltage: 30V, On-state resistance: 0.4Ω, Mounting: SMD, Gate charge: 43nC, Kind of channel: enhancement, Reverse recovery time: 400ns.
Weitere Produktangebote IXTA16N50P-TRL
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA16N50P-TRL | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns Type of transistor: N-MOSFET Drain-source voltage: 500V Drain current: 16A Power dissipation: 300W Case: D2PAK; TO263 Gate-source voltage: 30V On-state resistance: 0.4Ω Mounting: SMD Gate charge: 43nC Kind of channel: enhancement Reverse recovery time: 400ns |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH |
| IXTA16N50P-TRL |
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 500V; 16A; 300W; D2PAK,TO263; 400ns
Type of transistor: N-MOSFET
Drain-source voltage: 500V
Drain current: 16A
Power dissipation: 300W
Case: D2PAK; TO263
Gate-source voltage: 30V
On-state resistance: 0.4Ω
Mounting: SMD
Gate charge: 43nC
Kind of channel: enhancement
Reverse recovery time: 400ns
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH