auf Bestellung 92 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 10.77 EUR |
| 10+ | 9.43 EUR |
| 50+ | 6.07 EUR |
| 100+ | 5.56 EUR |
| 500+ | 5.03 EUR |
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Technische Details IXTA180N10T IXYS
Description: MOSFET N-CH 100V 180A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTA180N10T nach Preis ab 4.58 EUR bis 10.95 EUR
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IXTA180N10T | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 100V 180A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 180A (Tc) Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V Power Dissipation (Max): 480W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V |
auf Bestellung 2173 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA180N10T | Hersteller : IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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IXTA180N10T | Hersteller : Littelfuse |
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Produkt ist nicht verfügbar |