IXTA180N10T IXYS
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 180A; 480W; TO263; 72ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 180A
Power dissipation: 480W
Case: TO263
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 151nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Reverse recovery time: 72ns
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.35 EUR |
| 13+ | 7.06 EUR |
| 25+ | 5.63 EUR |
| 50+ | 5.15 EUR |
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Technische Details IXTA180N10T IXYS
Description: MOSFET N-CH 100V 180A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 6.4mOhm @ 25A, 10V, Power Dissipation (Max): 480W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6900 pF @ 25 V.
Weitere Produktangebote IXTA180N10T nach Preis ab 6.89 EUR bis 13.42 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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IXTA180N10T | IXYS |
MOSFETs 180 Amps 100V 6.1 Rds |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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| IXTA180N10T |
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Hersteller: IXYS
MOSFETs 180 Amps 100V 6.1 Rds
MOSFETs 180 Amps 100V 6.1 Rds
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.42 EUR |
| 10+ | 7.35 EUR |
| 100+ | 6.89 EUR |