auf Bestellung 300 Stücke:
Lieferzeit 673-677 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.58 EUR |
| 10+ | 3.52 EUR |
| 100+ | 2.92 EUR |
| 250+ | 2.48 EUR |
| 500+ | 2.41 EUR |
| 1000+ | 2.36 EUR |
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Technische Details IXTA1N100P IXYS
Description: MOSFET N-CH 1000V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V, Power Dissipation (Max): 50W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V.
Weitere Produktangebote IXTA1N100P
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IXTA1N100P | Hersteller : Littelfuse |
 Trans MOSFET N-CH 1KV 1A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| IXTA1N100P | Hersteller : IXYS |
IXTA1N100P SMD N channel transistors |
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IXTA1N100P | Hersteller : IXYS |
Description: MOSFET N-CH 1000V 1A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V Power Dissipation (Max): 50W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1000 V Gate Charge (Qg) (Max) @ Vgs: 15.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 331 pF @ 25 V |
Produkt ist nicht verfügbar |