auf Bestellung 1686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 8.34 EUR |
| 10+ | 7.02 EUR |
| 50+ | 5.97 EUR |
| 100+ | 5.30 EUR |
| 250+ | 5.17 EUR |
| 500+ | 5.14 EUR |
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Technische Details IXTA1N120P IXYS
Description: MOSFET N-CH 1200V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote IXTA1N120P nach Preis ab 4.01 EUR bis 8.71 EUR
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IXTA1N120P | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1200V 1A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 50µA Supplier Device Package: TO-263AA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V |
auf Bestellung 744 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1N120P | Hersteller : Littelfuse |
Trans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK |
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IXTA1N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Case: TO263 Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 1 Stücke |
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IXTA1N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Case: TO263 Reverse recovery time: 900ns Drain-source voltage: 1.2kV Drain current: 1A On-state resistance: 20Ω Type of transistor: N-MOSFET Power dissipation: 63W Polarisation: unipolar Kind of package: tube Features of semiconductor devices: standard power mosfet Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |