IXTA1N120P IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1200V 1A TO263
Packaging: Tube
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3+ | 8.18 EUR |
| 10+ | 6.87 EUR |
| 100+ | 5.56 EUR |
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Technische Details IXTA1N120P IXYS
Description: MOSFET N-CH 1200V 1A TO263, Packaging: Tube, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 17.6 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V.
Weitere Produktangebote IXTA1N120P nach Preis ab 5.16 EUR bis 8.34 EUR
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IXTA1N120P | Hersteller : IXYS |
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auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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Trans MOSFET N-CH 1.2KV 1A 3-Pin(2+Tab) D2PAK |
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IXTA1N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO263 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA1N120P | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 1A; 63W; TO263; 900ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 1A Power dissipation: 63W Case: TO263 On-state resistance: 20Ω Mounting: SMD Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: standard power mosfet Reverse recovery time: 900ns |
Produkt ist nicht verfügbar |