auf Bestellung 2400 Stücke:
Lieferzeit 227-231 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 37.44 EUR |
| 10+ | 37.36 EUR |
| 25+ | 34.92 EUR |
| 50+ | 27.7 EUR |
| 100+ | 26.36 EUR |
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Technische Details IXTA1N170DHV IXYS
Description: MOSFET N-CH 1700V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V, Power Dissipation (Max): 290W (Tc), Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.
Weitere Produktangebote IXTA1N170DHV nach Preis ab 20.68 EUR bis 37.51 EUR
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IXTA1N170DHV | Hersteller : IXYS |
 Description: MOSFET N-CH 1700V 1A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V Power Dissipation (Max): 290W (Tc) Supplier Device Package: TO-263HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V |
auf Bestellung 946 Stücke: Lieferzeit 10-14 Tag (e) |
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