IXTA1N170DHV IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1700V 1A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V
Power Dissipation (Max): 290W (Tc)
Supplier Device Package: TO-263HV
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V
auf Bestellung 155 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 35.38 EUR |
| 50+ | 21.39 EUR |
| 100+ | 20.87 EUR |
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Technische Details IXTA1N170DHV IXYS
Description: MOSFET N-CH 1700V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Depletion Mode, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V, Power Dissipation (Max): 290W (Tc), Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.
Weitere Produktangebote IXTA1N170DHV nach Preis ab 26.36 EUR bis 37.44 EUR
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IXTA1N170DHV | Hersteller : IXYS |
MOSFETs TO263 1.7KV 1A N-CH DEPL |
auf Bestellung 2400 Stücke: Lieferzeit 227-231 Tag (e) |
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IXTA1N170DHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Case: TO263HV Mounting: SMD Kind of package: tube Polarisation: unipolar Drain current: 1A Drain-source voltage: 1.7kV Reverse recovery time: 30ns On-state resistance: 16Ω Power dissipation: 290W Kind of channel: depletion Type of transistor: N-MOSFET |
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