auf Bestellung 2437 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 34.99 EUR |
| 10+ | 33.02 EUR |
| 25+ | 32.56 EUR |
| 50+ | 27.88 EUR |
| 100+ | 27.12 EUR |
| 250+ | 26.47 EUR |
| 500+ | 25.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA1N170DHV IXYS
Description: MOSFET N-CH 1700V 1A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 290W (Tc), Supplier Device Package: TO-263HV, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V.
Weitere Produktangebote IXTA1N170DHV nach Preis ab 27.23 EUR bis 35.04 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
IXTA1N170DHV | Hersteller : IXYS |
 Description: MOSFET N-CH 1700V 1A TO263Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1A (Tc) Rds On (Max) @ Id, Vgs: 16Ohm @ 500mA, 0V FET Feature: Depletion Mode Power Dissipation (Max): 290W (Tc) Supplier Device Package: TO-263HV Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3090 pF @ 25 V |
auf Bestellung 305 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||
 |
IXTA1N170DHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO263HV On-state resistance: 16Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||
|
|
IXTA1N170DHV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.7kV; 1A; 290W; TO263HV; 30ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.7kV Drain current: 1A Power dissipation: 290W Case: TO263HV On-state resistance: 16Ω Mounting: SMD Kind of package: tube Kind of channel: depleted Reverse recovery time: 30ns |
Produkt ist nicht verfügbar |