| Anzahl | Preis |
|---|---|
| 1+ | 14.87 EUR |
| 10+ | 14.85 EUR |
| 50+ | 10.54 EUR |
| 100+ | 9.59 EUR |
| 250+ | 9.49 EUR |
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Technische Details IXTA1N200P3HV IXYS
Description: MOSFET N-CH 2000V 1A TO263, Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V, Drain to Source Voltage (Vdss): 2000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 125W (Tc), Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXTA1N200P3HV nach Preis ab 8.75 EUR bis 17.65 EUR
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IXTA1N200P3HV | Littelfuse Inc. |
 Description: MOSFET N-CH 2000V 1A TO263Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Drain to Source Voltage (Vdss): 2000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 125W (Tc) Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube |
auf Bestellung 2067 Stücke: Lieferzeit 10-14 Tag (e) |
|
| IXTA1N200P3HV |
|
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 2000V 1A TO263
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 2000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Description: MOSFET N-CH 2000V 1A TO263
Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V
Drain to Source Voltage (Vdss): 2000 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 40Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 2067 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 17.65 EUR |
| 50+ | 9.99 EUR |
| 100+ | 9.09 EUR |
| 500+ | 8.75 EUR |