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IXTA1R4N100P

IXTA1R4N100P IXYS

media-3322461.pdf Hersteller: IXYS
MOSFETs 1.4 Amps 1000V 11 Rds
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6 EUR
10+4.33 EUR
50+3.29 EUR
100+3.03 EUR
250+2.96 EUR
500+2.64 EUR
1000+2.59 EUR
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Technische Details IXTA1R4N100P IXYS

Description: MOSFET N-CH 1000V 1.4A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V, Power Dissipation (Max): 63W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 50µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V.

Weitere Produktangebote IXTA1R4N100P nach Preis ab 3.06 EUR bis 6.05 EUR

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IXTA1R4N100P IXTA1R4N100P Hersteller : Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Description: MOSFET N-CH 1000V 1.4A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc)
Rds On (Max) @ Id, Vgs: 11Ohm @ 500mA, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 17.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.05 EUR
50+3.34 EUR
100+3.06 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXTA1R4N100P IXTA1R4N100P Hersteller : Littelfuse te_mosfets_n-channel_standard_ixt_1r4n100p_datasheet.pdf.pdf Trans MOSFET N-CH 1KV 1.4A 3-Pin(2+Tab) D2PAK
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