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Technische Details IXTA1R4N120P IXYS
Description: MOSFET N-CH 1200V 1.4A TO263, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V, Drain to Source Voltage (Vdss): 1200 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 86W (Tc), Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote IXTA1R4N120P nach Preis ab 6.42 EUR bis 9.45 EUR
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IXTA1R4N120P | Hersteller : IXYS |
 Description: MOSFET N-CH 1200V 1.4A TO263Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 666 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 24.8 nC @ 10 V Drain to Source Voltage (Vdss): 1200 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263AA Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 86W (Tc) Rds On (Max) @ Id, Vgs: 13Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 1.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 350 Stücke: Lieferzeit 10-14 Tag (e) |
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