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Technische Details IXTA1R6N100D2HV IXYS
Description: MOSFET N-CH 1000V 1.6A TO263HV, Drain to Source Voltage (Vdss): 1000 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 0V, Part Status: Active, Supplier Device Package: TO-263HV, Vgs(th) (Max) @ Id: 4.5V @ 100µA, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), FET Type: N-Channel, Depletion Mode, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V.
Weitere Produktangebote IXTA1R6N100D2HV
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IXTA1R6N100D2HV | Hersteller : Littelfuse Inc. |
 Description: MOSFET N-CH 1000V 1.6A TO263HVDrain to Source Voltage (Vdss): 1000 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 0V Part Status: Active Supplier Device Package: TO-263HV Vgs(th) (Max) @ Id: 4.5V @ 100µA Power Dissipation (Max): 100W (Tc) Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj) FET Type: N-Channel, Depletion Mode Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Mounting: SMD Reverse recovery time: 970ns Gate charge: 27nC Drain current: 1.6A On-state resistance: 10Ω Gate-source voltage: ±20V Power dissipation: 100W Drain-source voltage: 1kV Kind of channel: depletion Type of transistor: N-MOSFET Technology: Polar™ Case: TO263 Kind of package: tube Polarisation: unipolar |
Produkt ist nicht verfügbar |