IXTA1R6N100D2HV IXYS
Hersteller: IXYSDescription: MOSFET N-CH 1000V 1.6A TO263HV
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj)
Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V
FET Feature: Depletion Mode
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Supplier Device Package: TO-263HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 0V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 8.94 EUR |
| 50+ | 7.08 EUR |
| 100+ | 6.07 EUR |
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Technische Details IXTA1R6N100D2HV IXYS
Description: MOSFET N-CH 1000V 1.6A TO263HV, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tj), Rds On (Max) @ Id, Vgs: 10Ohm @ 800mA, 0V, FET Feature: Depletion Mode, Power Dissipation (Max): 100W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 100µA, Supplier Device Package: TO-263HV, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 0V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 1000 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 10 V.
Weitere Produktangebote IXTA1R6N100D2HV nach Preis ab 5.79 EUR bis 9.01 EUR
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IXTA1R6N100D2HV | Hersteller : IXYS |
MOSFET MSFT N-CH DEPL MODE-D2 |
auf Bestellung 110 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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| IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : Littelfuse |
High Voltage Depletion Mode MOSFET |
Produkt ist nicht verfügbar |
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IXTA1R6N100D2HV | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Polar™; unipolar; 1kV; 1.6A; 100W; TO263 Type of transistor: N-MOSFET Technology: Polar™ Polarisation: unipolar Drain-source voltage: 1kV Drain current: 1.6A Power dissipation: 100W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: SMD Gate charge: 27nC Kind of package: tube Kind of channel: depleted Reverse recovery time: 970ns |
Produkt ist nicht verfügbar |