IXTA20N65X2 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 290W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.185Ω
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 22A
Gate charge: 27nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 5.98 EUR |
| 14+ | 5.38 EUR |
| 15+ | 4.76 EUR |
| 50+ | 4.26 EUR |
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Technische Details IXTA20N65X2 IXYS
Description: MOSFET N-CH 650V 20A TO263, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V, Power Dissipation (Max): 290W (Tc), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V.
Weitere Produktangebote IXTA20N65X2 nach Preis ab 4.76 EUR bis 5.98 EUR
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IXTA20N65X2 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 22A; 290W; D2PAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 290W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.185Ω Mounting: SMD Kind of package: tube Kind of channel: enhancement Pulsed drain current: 22A Gate charge: 27nC |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA20N65X2 | Hersteller : IXYS |
Description: MOSFET N-CH 650V 20A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 185mOhm @ 10A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V |
Produkt ist nicht verfügbar |
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IXTA20N65X2 | Hersteller : IXYS |
MOSFETs TO263 650V 20A N-CH X3CLASS |
Produkt ist nicht verfügbar |