IXTA220N055T7 IXYS
Hersteller: IXYS
Description: MOSFET N-CH 55V 220A TO263-7
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263-7 (IXTA)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 430W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
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Technische Details IXTA220N055T7 IXYS
Description: MOSFET N-CH 55V 220A TO263-7, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-263-7 (IXTA), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 430W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 158 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V.
