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Technische Details IXTA26P10T IXYS
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263, Type of transistor: P-MOSFET, Drain-source voltage: -100V, Drain current: -26A, Power dissipation: 150W, Case: TO263, Gate-source voltage: ±15V, On-state resistance: 90mΩ, Mounting: SMD, Kind of channel: enhancement, Kind of package: tube, Reverse recovery time: 70ns, Gate charge: 52nC, Polarisation: unipolar, Technology: TrenchP™.
Weitere Produktangebote IXTA26P10T
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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IXTA26P10T | IXYS |
 MOSFET TenchP Power MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTA26P10T | IXYS |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263 Type of transistor: P-MOSFET Drain-source voltage: -100V Drain current: -26A Power dissipation: 150W Case: TO263 Gate-source voltage: ±15V On-state resistance: 90mΩ Mounting: SMD Kind of channel: enhancement Kind of package: tube Reverse recovery time: 70ns Gate charge: 52nC Polarisation: unipolar Technology: TrenchP™ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA26P10T |
|
Hersteller: IXYS
MOSFET TenchP Power MOSFET
MOSFET TenchP Power MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA26P10T |
|
Hersteller: IXYS
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; TrenchP™; unipolar; -100V; -26A; 150W; TO263
Type of transistor: P-MOSFET
Drain-source voltage: -100V
Drain current: -26A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±15V
On-state resistance: 90mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Reverse recovery time: 70ns
Gate charge: 52nC
Polarisation: unipolar
Technology: TrenchP™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH