IXTA270N04T4-7 IXYS
Hersteller: IXYSCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 270A
Power dissipation: 375W
Case: TO263-7
On-state resistance: 2.2mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: thrench gate power mosfet
Gate charge: 182nC
Reverse recovery time: 48ns
Anzahl je Verpackung: 1 Stücke
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Technische Details IXTA270N04T4-7 IXYS
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 40V, Drain current: 270A, Power dissipation: 375W, Case: TO263-7, On-state resistance: 2.2mΩ, Mounting: SMD, Kind of package: tube, Kind of channel: enhancement, Features of semiconductor devices: thrench gate power mosfet, Gate charge: 182nC, Reverse recovery time: 48ns, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote IXTA270N04T4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IXTA270N04T4-7 | Hersteller : IXYS |
MOSFET 40V/270A TrenchT4 Power MOSFET |
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IXTA270N04T4-7 | Hersteller : IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 270A; 375W; TO263-7; 48ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 270A Power dissipation: 375W Case: TO263-7 On-state resistance: 2.2mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: thrench gate power mosfet Gate charge: 182nC Reverse recovery time: 48ns |
Produkt ist nicht verfügbar |