IXTA34N65X2 Littelfuse Inc.
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 34A TO263AA
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Produktrezensionen
Produktbewertung abgeben
Technische Details IXTA34N65X2 Littelfuse Inc.
Description: MOSFET N-CH 650V 34A TO263AA, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Drain to Source Voltage (Vdss): 650 V, Vgs (Max): ±30V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263AA, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 540W (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Weitere Produktangebote IXTA34N65X2
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IXTA34N65X2 | IXYS |
MOSFETs TO263 650V 34A N-CH X2CLASS |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
IXTA34N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 34A Case: TO263 On-state resistance: 96mΩ Mounting: SMD Kind of package: tube Kind of channel: enhancement Reverse recovery time: 390ns Features of semiconductor devices: ultra junction x-class Gate charge: 54nC Power dissipation: 540W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IXTA34N65X2 |
|
Hersteller: IXYS
MOSFETs TO263 650V 34A N-CH X2CLASS
MOSFETs TO263 650V 34A N-CH X2CLASS
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IXTA34N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Power dissipation: 540W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 390ns
Features of semiconductor devices: ultra junction x-class
Gate charge: 54nC
Power dissipation: 540W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH