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IXTA34N65X2

IXTA34N65X2 Littelfuse


media.pdf Hersteller: Littelfuse
Trans MOSFET N-CH 650V 34A 3-Pin(2+Tab) D2PAK
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Technische Details IXTA34N65X2 Littelfuse

Description: MOSFET N-CH 650V 34A TO263AA, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 34A (Tc), Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V, Power Dissipation (Max): 540W (Tc), Vgs(th) (Max) @ Id: 5V @ 250µA, Supplier Device Package: TO-263AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V.

Weitere Produktangebote IXTA34N65X2

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IXTA34N65X2 IXTA34N65X2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Anzahl je Verpackung: 1 Stücke
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IXTA34N65X2 IXTA34N65X2 Hersteller : Littelfuse Inc. littelfuse-discrete-mosfets-ixt-120n65x2-datasheet?assetguid=2fc5b0bc-3c70-4763-8133-4874997afbe6 Description: MOSFET N-CH 650V 34A TO263AA
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Power Dissipation (Max): 540W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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IXTA34N65X2 IXTA34N65X2 Hersteller : IXYS media-3321137.pdf MOSFETs TO263 650V 34A N-CH X2CLASS
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IXTA34N65X2 IXTA34N65X2 Hersteller : IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A39F9618AC82B820&compId=IXTA34N65X2.pdf?ci_sign=0f26d130d1b2a8e9a14977ffb4f2cc94ed0afebc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 34A; 540W; TO263; 390ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 34A
Power dissipation: 540W
Case: TO263
On-state resistance: 96mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 390ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH